Wafer bonding
http://dbpedia.org/resource/Wafer_bonding an entity of type: Company
Das Waferbonden ist ein Verfahrensschritt in der Halbleiter- und Mikrosystemtechnik, bei dem zwei Wafer oder Scheiben (Silizium, Quarz, Glas und andere) miteinander verbunden werden.In der Mikrosystemtechnik wird Waferbonden genutzt, um die für die Sensoren nötigen Kavitäten herzustellen, so z. B. die Referenzdruckkammer bei einem absoluten Drucksensor oder die Unterdruckkammer einiger Drehratensensoren.
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基板接合（きばんせつごう、Wafer bonding）とは、基板を接合する技術であり、半導体集積回路作製技術やMEMS作製技術として使用される。主にシリコン基板同士またはシリコン基板と異種材料の基板を接合するために用いられる。
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Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s.
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Il collegamento su wafer, noto anche con l'espressione inglese wafer bonding, è una cosiddetta a livello di wafer (wafer-level packaging technology) per la fabbricazione di sistemi microelettromeccanici (microelectromechanical systems, MEMS), di sistemi nanoelettromeccanici (nanoelectromechanical systems, NEMS), di microelettronica e optoelettronica, che garantisce un incapsulamento meccanicamente stabile ed ermeticamente sigillato. Il diametro dei wafer varia da 100 mm a 200 mm (da 4 pollici a 8 pollici) per gli MEMS/NEMS e fino a 300 mm (12 pollici) per la produzione di dispositivi microelettronici.
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Wafer bonding
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Waferbonden
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Collegamento su wafer
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基板接合
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31331135
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1028799259
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Das Waferbonden ist ein Verfahrensschritt in der Halbleiter- und Mikrosystemtechnik, bei dem zwei Wafer oder Scheiben (Silizium, Quarz, Glas und andere) miteinander verbunden werden.In der Mikrosystemtechnik wird Waferbonden genutzt, um die für die Sensoren nötigen Kavitäten herzustellen, so z. B. die Referenzdruckkammer bei einem absoluten Drucksensor oder die Unterdruckkammer einiger Drehratensensoren.
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基板接合（きばんせつごう、Wafer bonding）とは、基板を接合する技術であり、半導体集積回路作製技術やMEMS作製技術として使用される。主にシリコン基板同士またはシリコン基板と異種材料の基板を接合するために用いられる。
rdf:langString
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS and up to 300 mm (12 inch) for the production of microelectronic devices. Smaller wafers were used in the early days of the microelectronics industry, with wafers being just 1 inch in diameter in the 1950s.
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Il collegamento su wafer, noto anche con l'espressione inglese wafer bonding, è una cosiddetta a livello di wafer (wafer-level packaging technology) per la fabbricazione di sistemi microelettromeccanici (microelectromechanical systems, MEMS), di sistemi nanoelettromeccanici (nanoelectromechanical systems, NEMS), di microelettronica e optoelettronica, che garantisce un incapsulamento meccanicamente stabile ed ermeticamente sigillato. Il diametro dei wafer varia da 100 mm a 200 mm (da 4 pollici a 8 pollici) per gli MEMS/NEMS e fino a 300 mm (12 pollici) per la produzione di dispositivi microelettronici.
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4534